Introduction to the Physics of Semiconductor Devices > 반도체

Preface
Ch. 1 Overview 1
Ch. 2 Material Properties and Basic P-N Junction Relations 27
Ch. 3 P-N Junction Diodes 59
Ch. 4 Bipolar Junction Transistors 93
Ch. 5 MOS Field-Effect Transistors 137
Ch. 6 Junction Field-Effect Transistors 167
Ch. 7 Overview of Special-Purpose Semiconductor Devices 183
Ch. 8 Silicon Chip Technology and Fabrication Techniques 215
App. A The Bohr Model of the Hydrogen atom 241
App. B The Schrodinger Wave Equation 243
App. C Electron in a Square Potential Well with Infinite Sides 245
App. D Splitting of Energy Levels 247
App. E The Fermi Probability Distribution 251
App. F Density of States and Free-Electron Distribution Versus Energy 253
App. G The Einstein Relation 257
App. H Minority Carrier Diffusion Current and Terminal Current 259
App. I The Wide-Base Diode Derivation 261
App. J The NN[superscript +] Junction and the P[superscript +]NN[superscript +] Diode 263
App. K Space-Charge Recombination Current 265
App. L Maximum Oscillation Frequency of the BJT 267
App. M ECL Propagation Delay Time 269
App. N Noise in Semiconductor Devices 271
App. O The BJT Gummel Integral 275
App. P MOS Inversion-Layer Charge as a Function of Surface Potential 277
App. Q Student BIPOLE on CD-ROM 279
App. R Some Useful Physical Constants 281
App. S List of Important Symbols 283
Index 285